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FDP025N06 N-Channel PowerTrench(R) MOSFET
July 2008
FDP025N06
60V, 265A, 2.5m Features
N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
(R)
tm
* RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handling capability * RoHS compliant
Application
* DC to DC convertors / Synchronous Rectification
D
GDS
TO-220 FDP Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (TC = 25 C, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3)
o
Ratings 60 20 265* 190* 120 1060 2531 3.5 395 2.6 -55 to +175 300
Units V V A A A A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.38 0.5 62.5
o
Units C/W
(c)2008 Fairchild Semiconductor Corporation FDP025N06 Rev. A3
1
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FDP025N06 N-Channel PowerTrench(R) MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP025N06 Device FDP025N06 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TC= 25oC ID = 250A, Referenced to 25oC VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 60 0.04 1 500 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 75A
(Note 4)
2.5 -
3.5 1.9 200
4.5 2.5 -
V m S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 48V, ID = 75A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
11190 1610 750 174 54 50
14885 2140 1125 226 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = 25
(Note 4, 5)
-
134 324 348 250
278 658 706 510
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s
(Note 4)
-
69 152
265 1060 1.3 -
A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.9mH, IAS = 75A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP025N06 Rev. A3
2
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FDP025N06 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
700
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
1000
*Notes: 1. VDS = 20V 2. 250s Pulse Test
ID,Drain Current[A]
100
ID,Drain Current[A]
100
175 C 25 C
o
o
10
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
10
-55 C
o
1 0.01
0.1 VDS,Drain-Source Voltage[V]
1
1 2 3 4 5 6 VGS,Gate-Source Voltage[V] 7
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
3.0
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
IS, Reverse Drain Current [A]
RDS(ON) [m], Drain-Source On-Resistance
175 C
o
2.5
VGS = 10V
100
2.0
VGS = 20V
25 C
o
10
*Notes: 1. VGS = 0V
2. 250s Pulse Test
1.5
*Note: TC = 25 C
o
1.0 0 100 200 300 ID, Drain Current [A] 400
1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V]
1.4
Figure 5. Capacitance Characteristics
16000
Ciss *Note: 1. VGS = 0V 2. f = 1MHz
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 15V VDS = 30V VDS = 48V
8
12000 Capacitances [pF]
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
6
Coss
8000
4
4000
Crss
2
*Note: ID = 75A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 60
0
40 80 120 160 Qg, Total Gate Charge [nC]
200
FDP025N06 Rev. A3
3
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FDP025N06 N-Channel PowerTrench(R) MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.15
Figure 8. On-Resistance Variation vs. Temperature
2.0 RDS(on), [Normalized] Drain-Source On-Resistance
BVDSS, [Normalized] Drain-Source Breakdown Voltage
1.10
1.6
1.05
1.2
1.00
*Notes: 1. VGS = 0V 2. ID = 10mA
0.8
0.95
*Notes: 1. VGS = 10V 2. ID = 75A
0.90 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.4 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
300
1000
10s
250 ID, Drain Current [A] 200 150 100 50 0 25
ID, Drain Current [A]
100
100s 1ms 10ms DC
10
Operation in This Area is Limited by R DS(on) *Notes:
Limited by package
1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
0.1 1 10 VDS, Drain-Source Voltage [V] 100
50
75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
1
Thermal Response [ZJC]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 Single pulse
PDM t1 t2
o
*Notes:
0.01 10
-4 -3 -2
1. ZJC(t) = 0.38 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.005 -5 10
10 10 10 Rectangular Pulse Duration [sec]
-1
1
10
FDP025N06 Rev. A3
4
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FDP025N06 N-Channel PowerTrench(R) MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP025N06 Rev. A3
5
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FDP025N06 N-Channel PowerTrench(R) MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
* dv/dt controlled by RG * ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
FDP025N06 Rev. A3
6
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FDP025N06 N-Channel PowerTrench(R) MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 4.50 0.20
1.30 0.10
2.80 0.10
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP025N06 Rev. A3
7
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TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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Rev. I35

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